Quartz (SiO₂) Applied to Ceramic Product | Fine Ceramic Components for Science, Space and Semiconductor Industries | Touch-Down Technology Co., Ltd

Semiconductor Quartz / Touch-Down is a compact, high-precision ceramic part manufacturer, who is specialized in the manufacture of fine ceramics / advanced ceramics / special ceramics integrating production and sales from raw material preparation, molding, plane grinding, abrasive machining of inner and outer diameters to digital processing of NC drilling crew.

Semiconductor Quartz

Quartz (SiO₂) Applied to Ceramic Product

Quartz is a kind of glass like its name but what makes it different is that ordinary glass consists of many components, while quartz only consists of SiO₂. Because quartz contains very little amount of metallic impurities, only up to 10ppm (one hundred thousandth), the minimum state is usually only 10ppb (one over a billion) or less and because of its high purity, the quartz itself presents characteristics and advantages that other glass can not present.


Quartz (SiO₂) material features extremely low thermal expansion coefficient, high temperature resistance, high abrasion resistance, good chemical stability, electrical insulation, low and stable retardation, near ultraviolet (infrared) ray visible light transmittance, high mechanical properties and so on.

Therefore, high-purity quartz materials are widely used in modern electronic technology, semiconductor, telecommunications, electric light source, solar energy, national defense high-precision measuring instruments, laboratory physics and chemistry instruments, nuclear energy, nano-industries.

Semiconductor Applications
In the manufacturing process of semiconductor, the main quartz materials are used for quartz tube furnace, quartz boat, quartz ring, quartz tank, windows, process equipment and other related quartz components.
Quartz processing include: surface grinding, polishing, cylinder cutting, cutting, groove processing, curve processing, special-shaped processing, ultra-fine hole drilling, film coating.

Characteristics Of Quartz

1. Easy Light Penetration
The easy light penetration of quartz not only applies to visible light. The wavelength light ranges from ultraviolet to infrared light also present good penetration.
2. High Purity
As it's only composed of SiO₂, it contains only trace amounts of metal impurities.
3. Heat Resistance
With softening point of about 1700°C, it can be used at a high temperature of 1000°C. The thermal expansion coefficient is small, which can withstand dramatic temperature changes.
4. Drug Erosion Resistance
It features quite stable chemical properties with excellent chemical resistance.

Quartz Material Characteristics Table
1. Material impurity content analysis (SIO₂ content: ≥ 99.995%)
FeMgMnKLiCoNiCuNaBTiCaAl
1.20.40.12.00.5< 0.020.030.572.30.80.10.816
2. Optical Test: Refractive index and dispersion values (na = 1.45845)
Category20°CUVIRVisible light
Na value1.4586 ± 4 x 10-41.5341 - 1.49421.4251 - 1.474511.4698 - 1.45413
Mean dispersion and dispersion coefficient / Nf-Nc=0.00674 ±3 x 10-4 / Dispersion coefficient Y= 680
3. Thermal Test
Thermal Expansion CoefficientTemperature °C1003005007009001100
Thermal Expansion Coefficient x 10-75.115.925.655.735.525.48
Heat Conduction W/m°CTemperature °C20100200300400950
Heat Conduction Coefficient1.381.471.551.671.842.68
Thermal Energy Rate J/Kg°CTemperature °C20100500900
Thermal Energy Rate6907729641052
4. Electricity Test
Electricity PerformanceDielectric Constant (E)20°C23°C28°C
3.73.773.81
(Tgδ)1 kHz1-1000 MHz3 x 10-4MHz
0.00050.00010.0004
Resistivity Factor
(Ω cm)
20°C400°C800°C1200°C
101610106.3 x 1061.3 x 105
5. Reaction of Material and Oxide
AIO₃MgOCaOZnOFe-OxideCuOBaOBasic-OxidePbO
> 1200°C> 950°C> 1000°C> 800°C> 950°C> 950°C> 900°C> 800°CMelting state
6. Mechanical Properties
Density2.21 g/cm³Compression strength6000N/mm²
160000psi
Extension strength50 N/mm²Torque force30 N/mm²
Mohs Hardness5.5 - 6.5 N/mm²Torque coefficient3.1 x 104 N/mm²Bending withstanding67 N/mm²Sound velocity5720m x s
7. Temperature Changes

Strain point: 1000 - 1125°C
Long-term use: below 1100°C
Annealing point: 1180°C
Short-term use: 1450°C
Softening point: 1600 - 1710°C
Melting: 1730°C

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